Reducing Threshold Voltage of RRAM

Objective: Material Developments for Threshold Voltage Reduction in Resistive Memory.
Feature: Varying the structure of presently used material & new material development.

Present RRAM has switching voltage thresholds significantly higher than logic level of CMOS. In this study, novel materials and novel structure of materials are implemented in fabrication to produce memory cells with significantly reduced threshold voltage. Corresponding fabrication processes are being developed.

Resistive RAM