2023 DSSC Spring Technical Review
May 10, 2023
 Carnegie Mellon University, Silicon Valley
 NASA Ames Research Park Bldg. 23, Moffet Field, CA 94035
The DSSC Technical Review at Carnegie Mellon University, held twice a year, is an opportunity for center members, invited guests, and DSSC personnel to be brought up-to-date on current DSSC research progress through oral presentations and poster sessions that highlight the center's project areas. 
Agenda
Wednesday, May 10, 2023 All sessions will be held at Carnegie Mellon University, Silicon Valley Campus | 
| 8:00-9:00 PST | 
Breakfast | 
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| 
 9:00-9:45 PST 
12:00-12:45 EST 
 | 
 HAMR Tutorial and Research Agenda Overview I      
Jimmy Zhu 
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    | 
| 
 9:45-10:30 PST  
12:45-1:30 EST 
 | 
 HAMR Tutorial and Research Agenda Overview II      
Jim Bain 
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    | 
| 
 10:30-11:00 PST   
 | 
 Break 
 | 
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| 
 11:00-11:30 PST 
2:00-2:30 EST 
 | 
 Welcome & State of the DSSC 
Jimmy Zhu 
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    | 
| 
 11:30-11:45 PST  
2:30-2:45 EST 
 | 
 Fabrication of 16nm-thick granular L10 FePt-hBN thin film  
Chengchao Xu 
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    | 
| 
 11:45-12:00 PST 
2:45-3:00 EST 
 | 
 Recent Innovation in HDD Readers 
Jimmy Zhu 
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    | 
| 12:00-1:00 PST | 
Lunch | 
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| 
 1:00-1:15 PST 
4:00-4:15 EST 
 | 
 Capacitive Plasmonic Near Field Transducer with Distributed Feedback 
Tianxiang Du 
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    | 
| 
 1:15-1:30 PST 
4:15-4:30 EST 
 | 
 Experimental Investigation of Optical Heating in NFT Under High Laser Power Conditions 
Wenyi Zhang 
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    | 
| 
 1:45-2:00 PST 
4:45-5:00 EST 
 | 
 Memory and Logic Overview 
Jim Bain 
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    | 
| 
 2:00-2:20 PST 
5:00-5:20 EST 
 | 
 In-plane and perpendicular SOT-MRAM switching enabled by in-plane uniaxial magnetocrystalline anisotropy 
Shreyes Nallan 
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    | 
| 2:20-2:40 PST     | 
 Break 
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| 
 2:40–3:00 PST 
5:40-6:00 EST 
 | 
 Mechanisms of Segregation in Phase Change Memory Materials 
Marek Skowronski for Yiqi Yu 
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    | 
| 
 3:00-3:20 PST 
6:00-6:20 EST 
 | 
 Making RACER Compute in Memory Agnostic as to Memory Technology 
Jim Bain for Minh Truong 
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    | 
| 
 3:20-3:35 PST 
6:20-6:35 EST 
 | 
 Increased Cyclabilty GeSe Threshold Switches Using TaOx Doping 
Yuezhang (Edward) Zou 
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    | 
| 
 3:35-3:50 PST  
6:35-6:50 EST 
 | 
 Measuring threshold voltage variation and resistance variation of RRAM devices 
Liting (Oscar) Shen 
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    | 
3:50-4:00 PST    6:50-7:00 EST
  | 
Wrap up / Q &A |