April 1, 2011
ABB Professor of Engineering and DSSC Director Jimmy Zhu earned the College of Engineering's Outstanding Research Award in March for his seminal contributions to magnetoresistive random access memory (MRAM) technology.
The award, which honors a faculty member or team whose research contributions have enhanced the reputation of CIT, noted that Zhu's pioneering work on magnetization switching in MRAM elements enabled a solution to the wide switching field distribution of planar MRAM, and his publication of the phenomenon of magnetization flop in synthetic antiferromagnetic trilayers led to the Toggle MRAM now being manufactured. The award also recognized his distinction of being the first person to propose/publish the concept of perpendicular spin torque MRAM, which the International Technology Roadmap for Semiconductors recently voted one of two non-volatile memory technologies most likely to succeed flash memory.
For more on the CIT Faculty Awards, visit www.cit.cmu.edu/facultystaff/facultyawards/index.html.